bd896, bd898, bd900, BD902 pnp silicon power darlingtons
1 august 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bd895, bd897, bd899 and bd901 70 w at 25c case temperature 8 a continuous collector current minimum h fe of 750 at 3v, 3a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. derate linearly to 150c case temperature at the rate of 0.56 w/c. 2. derate linearly to 150c free air temperature at the rate of 16 mw/c. rating symbol value unit collector-base voltage (i e = 0) bd896 bd898 bd900 BD902 v cbo -45 -60 -80 -100 v collector-emitter voltage (i b = 0) bd896 bd898 bd900 BD902 v ceo -45 -60 -80 -100 v emitter-base voltage v ebo -5 v continuous collector current i c -8 a continuous base current i b -0.3 a continuous device dissipation at (or below) 25c case temperature (see note 1) p tot 70 w continuous device dissipation at (or below) 25c free air temperature (see note 2) p tot 2w operating free-air temperature range t a -65 to +150 c operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c b c e to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdtraca 1 2 3
bd896, bd898, bd900, BD902 pnp silicon power darlingtons 2
august 1993 - revised september 2002 specifications are subject to change without notice. notes: 3. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 4. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. ? voltage and current values shown are nominal; exact values vary slightly with transistor parameters. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = -100 ma i b = 0 (see note 3) bd896 bd898 bd900 BD902 -45 -60 -80 -100 v i ceo collector-emitter cut-off current v ce = -30 v v ce = -30 v v ce = -40 v v ce = -50 v i b =0 i b =0 i b =0 i b =0 bd896 bd898 bd900 BD902 -0.5 -0.5 -0.5 -0.5 ma i cbo collector cut-off current v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v v cb = -45 v v cb = -60 v v cb = -80 v v cb = -100 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 100c t c = 100c t c = 100c t c = 100c bd896 bd898 bd900 BD902 bd896 bd898 bd900 BD902 -0.2 -0.2 -0.2 -0.2 -2 -2 -2 -2 ma i ebo emitter cut-off current v eb = -5 v i c = 0 (see notes 3 and 4) -2 ma h fe forward current transfer ratio v ce = -3 v i c = -3 a (see notes 3 and 4) 750 v ce(sat) collector-emitter saturation voltage i b = -12 ma i c = -3 a (see notes 3 and 4) -2.5 v v be(on) base-emitter voltage v ce = -3 v i c = -3 a (see notes 3 and 4) -2.5 v v ec parallel diode forward voltage i e = -8 a i b = 0 -3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1.79 c/w r ja junction to free air thermal resistance 62.5 c/w resistive-load-switching characteristics at 25c case temperature parameter test conditions ? min typ max unit t on tu r n - o n t i m e i c = -3 a v be(off) = 3.5 v i b(on) = -12 ma r l = 10 ? i b(off) = 12 ma t p = 20 s, dc 2% 1s t off turn-off time 5s
bd896, bd898, bd900, BD902 pnp silicon power darlingtons 3
august 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a -05 -10 -10 h fe - typical dc current gain 50000 100 1000 10000 tcs135ad t c = -40c t c = 25c t c = 100c v ce = -3 v t p = 300 s, duty cycle < 2% collector-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v ce(sat) - collector-emitter saturation voltage - v -20 -15 -10 -05 tcs135ab t c = -40c t c = 25c t c = 100c t p = 300 s, duty cycle < 2% i b = i c / 100 base-emitter saturation voltage vs collector current i c - collector current - a -05 -10 -10 v be(sat) - base-emitter saturation voltage - v -30 -25 -20 -15 -10 -05 tcs135ac t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
bd896, bd898, bd900, BD902 pnp silicon power darlingtons 4
august 1993 - revised september 2002 specifications are subject to change without notice. maximum safe operating regions figure 4. thermal information figure 5. maximum forward-bias safe operating area v ce - collector-emitter voltage - v -10 -10 -100 -1000 i c - collector current - a -0.01 -01 -10 -10 sas135ad bd896 bd898 bd900 BD902 maximum power dissipation vs case temperature t c - case temperature - c 0 255075100125150 p tot - maximum power dissipation - w 0 10 20 30 40 50 60 70 80 tis130ab
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